Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US11442152Application Date: 2006-05-30
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Publication No.: US07663175B2Publication Date: 2010-02-16
- Inventor: Kazufumi Komura , Takayoshi Nakamura , Keiichi Fujimura , Masahito Hirose , Keigo Nakashima , Masaki Nagato
- Applicant: Kazufumi Komura , Takayoshi Nakamura , Keiichi Fujimura , Masahito Hirose , Keigo Nakashima , Masaki Nagato
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-040340 20060217
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94

Abstract:
A semiconductor integrated circuit device provided with a plurality of power supply wire layers including a first potential power supply wire and a second potential power supply wire formed in different layers. At least one capacitor contact wire extends from one of the first and second potential power supply wires toward the other one of the first and second potential power supply wires so as to form a capacitor between each capacitor contact wire and its surrounding wires.
Public/Granted literature
- US20070195946A1 Semiconductor integrated circuit device Public/Granted day:2007-08-23
Information query
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