Invention Grant
- Patent Title: CMOS image sensor
- Patent Title (中): CMOS图像传感器
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Application No.: US11643368Application Date: 2006-12-20
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Publication No.: US07663194B2Publication Date: 2010-02-16
- Inventor: Nan-Yi Lee
- Applicant: Nan-Yi Lee
- Agency: McAndrews, Held & Malloy, Ltd.
- Main IPC: H01L29/72
- IPC: H01L29/72

Abstract:
A pixel of a complementary metal oxide semiconductor (CMOS) image sensor includes a plurality of photodiodes for sensing light to thereby generate photoelectric charges in different regions; a plurality of transfer transistors for transferring photoelectric charges of corresponding photodiodes in response to a first control signal; a floating diffusion region for receiving photoelectric charges transferred by the plurality of transfer transistors; a rest transistor connected between a power supply voltage and the floating diffusion region for resetting the floating diffusion region by controlling a voltage loaded on the floating diffusion region in response to a second control signal; a drive transistor connected between the power supply voltage and the floating diffusion region to serve as a source follower buffer amplifier; and a select transistor connected between the drive transistor and a pixel output terminal for performing an addressing operation in response to a third control signal.
Public/Granted literature
- US20070269944A1 CMOS image sensor Public/Granted day:2007-11-22
Information query
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