Invention Grant
- Patent Title: Magnetoresistive random access memory device with alternating liner magnetization orientation
- Patent Title (中): 磁阻随机存取存储器件具有交替的线性磁化方向
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Application No.: US11512066Application Date: 2006-08-29
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Publication No.: US07663198B2Publication Date: 2010-02-16
- Inventor: Ulrich Klostermann
- Applicant: Ulrich Klostermann
- Applicant Address: DE Munich FR Corbeil Essonnes Cedex
- Assignee: Qimonda AG,ALTIS Semiconductor, SNC
- Current Assignee: Qimonda AG,ALTIS Semiconductor, SNC
- Current Assignee Address: DE Munich FR Corbeil Essonnes Cedex
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G11C11/15
- IPC: G11C11/15 ; H01L21/8246

Abstract:
An arrangement of magnetic liners for the bit lines or word lines of an MRAM device that reduces or eliminates stray magnetic fields at the ends of the magnetic liners, thereby reducing the occurrence of offset fields over portions of the MRAM device due to the magnetic liners is described. The orientation of magnetization of adjacent magnetic liners is alternated, causing the end poles of the magnetic liners to cancel each other. The shapes of the ends of the magnetic liners are alternated to vary their switching fields. Methods are described that use this ability to vary the switching fields to alternate the orientation of magnetization of the magnetic liners.
Public/Granted literature
- US20080054385A1 Magnetoresistive random access memory device with alternating liner magnetization orientation Public/Granted day:2008-03-06
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