Invention Grant
US07663201B2 Semiconductor device with a diffusion barrier film having a spacing for stress relief of solder bump
有权
具有扩散阻挡膜的半导体器件，其具有用于焊料凸点的应力消除的间隔
- Patent Title: Semiconductor device with a diffusion barrier film having a spacing for stress relief of solder bump
- Patent Title (中): 具有扩散阻挡膜的半导体器件，其具有用于焊料凸点的应力消除的间隔
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Application No.: US11447966Application Date: 2006-06-07
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Publication No.: US07663201B2Publication Date: 2010-02-16
- Inventor: Yukiko Yamada
- Applicant: Yukiko Yamada
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2006-133823 20060512; JP2005-171317 20060610
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/4763 ; H01L29/40
Abstract:
The present invention provides a semiconductor device exhibiting an improved reliability. A semiconductor device comprises a semiconductor chip having an electrode on a surface thereof and a mounting substrate, and the electrode (aluminum electrode) of the semiconductor chip is coupled to the mounting substrate through a bump (solder bump 104). A plurality of diffusion barrier films (UBM 112) for preventing a diffusion of a material composing the bump is provided between the electrode and the bump, and the diffusion barrier film is formed to have a plurality of divided portions via spacings therebetween.
Public/Granted literature
- US20060278984A1 Semiconductor device Public/Granted day:2006-12-14
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