Invention Grant
- Patent Title: Semiconductor device and method for producing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11342294Application Date: 2006-01-27
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Publication No.: US07663222B2Publication Date: 2010-02-16
- Inventor: Gerhard Lohninger , Ulrich Krumbein
- Applicant: Gerhard Lohninger , Ulrich Krumbein
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Maginot, Moore & Beck
- Priority: DE102005004160 20050128
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
The semiconductor device includes a semiconductor body having a first and an opposite second main surface and side faces connecting the main surfaces, a circuit region in the semiconductor body adjacent to the first main surface, having a circuit contact terminal, a metallization region extending from the circuit contact terminal on the first main surface onto a side face of the semiconductor body to provide an exposed contacting region on the side face of the semiconductor body, and an insulation layer arranged between the metallization region and the semiconductor body, the insulation layer having an opening for electrically connecting the circuit contact terminal to the metallization region.
Public/Granted literature
- US20060197187A1 Semiconductor device and method for producing same Public/Granted day:2006-09-07
Information query
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