Invention Grant
- Patent Title: Wiring material and a semiconductor device having a wiring using the material, and the manufacturing method thereof
- Patent Title (中): 布线材料和具有使用该材料的布线的半导体器件及其制造方法
-
Application No.: US12186709Application Date: 2008-08-06
-
Publication No.: US07663238B2Publication Date: 2010-02-16
- Inventor: Shunpei Yamazaki , Toru Takayama
- Applicant: Shunpei Yamazaki , Toru Takayama
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Cook Alex Ltd.
- Priority: JP11-072818 19990317
- Main IPC: H01L23/532
- IPC: H01L23/532
Abstract:
An object of the present invention is to realize a semiconductor device having a high TFT characteristic. In manufacturing an active matrix display device, electric resistivity of the electrode material is kept low by preventing penetration of oxygen ion into the electrode in doping of an impurity ion. A display device having a low electric resistivity can be obtained.
Public/Granted literature
Information query
IPC分类:
