Invention Grant
- Patent Title: Light emitting device and method of manufacturing the same
- Patent Title (中): 发光元件及其制造方法
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Application No.: US10602980Application Date: 2003-06-24
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Publication No.: US07663305B2Publication Date: 2010-02-16
- Inventor: Shunpei Yamazaki , Takeshi Noda
- Applicant: Shunpei Yamazaki , Takeshi Noda
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Cook Alex Ltd.
- Priority: JP2002-187621 20020627
- Main IPC: H01J1/62
- IPC: H01J1/62

Abstract:
In a top emission structure, there has been a problem in that a wiring, a TFT, or the like is provided in regions other than a light emitting region so that light reflected by the wiring reaches eyes of an observer. The present invention prevents light that is reflected by a wire from reaching eyes of an observer by providing a light-absorbing multilayer film (61) in regions other than a light emitting region. Specifically, the light-absorbing multilayer film (61) is used as an upper layer of a partition wall (also called as a bank or a barrier) that covers ends of a first electrode (66b) whereas an organic resin film (67) is used as a lower layer of the partition wall. The partition wall in the present invention is characterized by being a laminate of three or more layers formed of different materials.
Public/Granted literature
- US20050073243A1 Light emitting device and method of manufacturing the same Public/Granted day:2005-04-07
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