Invention Grant
- Patent Title: Inspection apparatus and method
- Patent Title (中): 检验仪器及方法
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Application No.: US12146029Application Date: 2008-06-25
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Publication No.: US07663390B2Publication Date: 2010-02-16
- Inventor: Takeshi Sunaoshi , Kouichi Kurosawa , Takeshi Sato , Masaaki Komori
- Applicant: Takeshi Sunaoshi , Kouichi Kurosawa , Takeshi Sato , Masaaki Komori
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-165899 20070625
- Main IPC: G01R31/02
- IPC: G01R31/02

Abstract:
There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.
Public/Granted literature
- US20090009203A1 INSPECTION APPARATUS AND METHOD Public/Granted day:2009-01-08
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