Invention Grant
- Patent Title: High voltage stress test circuit
- Patent Title (中): 高压应力测试电路
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Application No.: US12352812Application Date: 2009-01-13
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Publication No.: US07663402B2Publication Date: 2010-02-16
- Inventor: Yong Weon Jeon
- Applicant: Yong Weon Jeon
- Applicant Address: KR Seongnam-si
- Assignee: TLI Inc.
- Current Assignee: TLI Inc.
- Current Assignee Address: KR Seongnam-si
- Agency: Kile Goekjian Reed & McManus PLLC
- Agent Jae Y. Park
- Priority: KR10-2008-0003774 20080114
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
A high voltage stress test circuit includes an internal data generation unit for generating internal data and inverted internal data, and a level shifter for receiving the internal data and the inverted internal data and for generating digital data and inverted digital data. In a normal mode, the internal data and the inverted internal data have logic states corresponding to input data, while the digital data and the inverted digital data have logic states corresponding to the internal data and the inverted internal data. In a high voltage stress test mode, the internal data and the inverted internal data have predetermined logic states regardless of a logic state of the input data, while the digital data and the inverted digital data have predetermined logic states regardless of logic states of the internal data and the inverted internal data.
Public/Granted literature
- US20090195266A1 HIGH VOLTAGE STRESS TEST CIRCUIT Public/Granted day:2009-08-06
Information query
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