Invention Grant
US07663407B2 Semiconductor device having transfer gate between pre-buffer and main buffer
有权
具有预缓冲器和主缓冲器之间的传输门的半导体器件
- Patent Title: Semiconductor device having transfer gate between pre-buffer and main buffer
- Patent Title (中): 具有预缓冲器和主缓冲器之间的传输门的半导体器件
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Application No.: US12213780Application Date: 2008-06-24
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Publication No.: US07663407B2Publication Date: 2010-02-16
- Inventor: Tomoya Nishitani , Kenichi Kawakami
- Applicant: Tomoya Nishitani , Kenichi Kawakami
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-179364 20070709
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
A semiconductor device includes a pre-buffer for transferring a data signal on the basis of a first power supply voltage, a main buffer for amplifying and outputting the data signal transferred by the pre-buffer on the basis of a second power supply voltage different from the first power supply voltage, a switch unit for controlling a conductive state between the pre-buffer and the main buffer on the basis of a switch control signal, and a control circuit for generating the switch control signal for controlling the pre-buffer to set an output level of the pre-buffer to ground potential in accordance with transition of logical level of the switch control signal.
Public/Granted literature
- US20090015292A1 Semiconductor device having transfer gate between pre-buffer and main buffer Public/Granted day:2009-01-15
Information query
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