Invention Grant
- Patent Title: Method and apparatus for providing leakage current compensation in electrical circuits
- Patent Title (中): 在电路中提供泄漏电流补偿的方法和装置
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Application No.: US11451220Application Date: 2006-06-12
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Publication No.: US07663412B1Publication Date: 2010-02-16
- Inventor: Ramin Farjadrad
- Applicant: Ramin Farjadrad
- Applicant Address: US CA Milpitas
- Assignee: Aquantia Corporation
- Current Assignee: Aquantia Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Sawyer Law Group, P.C.
- Main IPC: G05F3/20
- IPC: G05F3/20 ; H03K17/60 ; H03K17/687

Abstract:
A circuit is provided that (in one implementation) includes a first transistor having a first drain terminal, first gate terminal, and a first source terminal. The first drain terminal is connected to the first gate terminal, the first source terminal is connected to a first voltage. The circuit further includes a second transistor having a second drain terminal, second gate terminal, and a second source terminal. The second gate terminal is connected to both the first gate terminal and the first drain terminal, and the second source terminal is connected to the first voltage. The circuit further includes a third transistor having a third drain terminal, a third gate terminal, and a third source terminal. The third drain terminal is connected to the first drain terminal, and the third source terminal is connected to both the third gate terminal and a second voltage that is lower than the first voltage.
Information query
IPC分类: