Invention Grant
- Patent Title: Amplifying circuit utilizing nonlinear gate capacitance for enhancing linearity and related method thereof
- Patent Title (中): 利用非线性栅极电容增强线性的放大电路及其相关方法
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Application No.: US11858137Application Date: 2007-09-20
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Publication No.: US07663444B2Publication Date: 2010-02-16
- Inventor: Po-Chih Wang
- Applicant: Po-Chih Wang
- Applicant Address: TW Hsinchu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Priority: TW95135404A 20060925
- Main IPC: H03F3/191
- IPC: H03F3/191
Abstract:
An apparatus for amplifying an input signal is disclosed. The apparatus includes a first amplifying circuit and a first resonating circuit. The first amplifying circuit includes a first transistor having a first gate for receiving the input signal. The first amplifying circuit amplifies the input signal to generate a first output signal. The first resonating circuit is coupled to the first amplifying circuit, wherein a first resonating frequency of the first resonating circuit is not equal to the operating frequency.
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