A solid state image sensing device includes an MOS transistor T2 that has a source thereof connected to a drain of an MOS transistor T1 being provided with a transfer gate which is connected to an embedded photodiode PD; an MOS transistor T5 that has a gate thereof connected to the drain of the MOS transistor T1; and a condenser that has a source thereof connected to the MOS transistor T5. When a linear conversion operation is performed in an entire range of luminance, the MOS transistor T2 works, serving as a switch for resetting, and at least when a logarithmic conversion operation is performed in a part of the range of luminance, the MOS transistor T2 works in a sub-threshold region.