Invention Grant
- Patent Title: Semiconductor solid-state laser gyro having a vertical structure
- Patent Title (中): 具有垂直结构的半导体固态激光陀螺仪
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Application No.: US11718717Application Date: 2005-10-26
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Publication No.: US07663763B2Publication Date: 2010-02-16
- Inventor: Gilles Feugnet , Jean-Paul Pocholle , Sylvain Schwartz
- Applicant: Gilles Feugnet , Jean-Paul Pocholle , Sylvain Schwartz
- Applicant Address: FR Neuilly-sur-Seine
- Assignee: Thales
- Current Assignee: Thales
- Current Assignee Address: FR Neuilly-sur-Seine
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: FR0411816 20041105
- International Application: PCT/EP2005/055574 WO 20051026
- International Announcement: WO2006/048398 WO 20060511
- Main IPC: G01C19/66
- IPC: G01C19/66

Abstract:
A laser gyro includes a semiconductor medium and assembled discrete elements, thus offering the possibility of producing large cavities for achieving the desired precision. More precisely, the laser gyro includes an optical ring cavity and a semiconductor amplifying medium with an external cavity having a vertical structure. The semiconductor amplifying medium which is used in reflection includes a stack of plane gain regions that are mutually parallel, and the dimensions of the cavity being substantially are larger than those of the amplifying medium.
Public/Granted literature
- US20090073452A1 SEMICONDUCTOR SOLID-STATE LASER GYRO HAVING A VERTICAL STRUCTURE Public/Granted day:2009-03-19
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