Invention Grant
- Patent Title: Nonvolatile memory
- Patent Title (中): 非易失性存储器
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Application No.: US10588064Application Date: 2005-02-04
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Publication No.: US07663915B2Publication Date: 2010-02-16
- Inventor: Kiyoshi Kato
- Applicant: Kiyoshi Kato
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-033075 20040210; JP2004-033081 20040210
- International Application: PCT/JP2005/002108 WO 20050204
- International Announcement: WO2005/076281 WO 20050818
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A memory cell for storing 1-bit data is formed by using at least two memory elements in the OTP type nonvolatile memory using a memory element that have two states and can transit only in one direction. In the OTP type nonvolatile memory using a memory element that has two states of an H state (a first state) and an L (a second state) state (hereinafter simply referred to as H and L) and can electrically transit only in one direction from L to H, a memory cell for storing 1-bit data is formed by using two or more memory elements.
Public/Granted literature
- US20080144374A1 Nonvolatile Memory Public/Granted day:2008-06-19
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