Invention Grant
US07663915B2 Nonvolatile memory 有权
非易失性存储器

Nonvolatile memory
Abstract:
A memory cell for storing 1-bit data is formed by using at least two memory elements in the OTP type nonvolatile memory using a memory element that have two states and can transit only in one direction. In the OTP type nonvolatile memory using a memory element that has two states of an H state (a first state) and an L (a second state) state (hereinafter simply referred to as H and L) and can electrically transit only in one direction from L to H, a memory cell for storing 1-bit data is formed by using two or more memory elements.
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