Methods of programming a non-volatile memory device having at least one memory block with a plurality of memory cells located at intersections of rows and columns is disclosed. Pursuant to these methods, at least two addresses that select corresponding rows of the memory block may be received and temporarily stored. Then, the rows selected by the temporarily stored addresses may be simultaneously activated, and at least some of the memory cells in the activated rows are simultaneously programmed. Corresponding non-volatile memory devices are also provided.