Invention Grant
- Patent Title: Semiconductor memory device with adjustable I/O bandwidth
- Patent Title (中): 具有可调I / O带宽的半导体存储器件
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Application No.: US11294531Application Date: 2005-12-06
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Publication No.: US07663935B2Publication Date: 2010-02-16
- Inventor: Hee Bok Kang
- Applicant: Hee Bok Kang
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2002-0079722 20021213
- Main IPC: G11C7/10
- IPC: G11C7/10
Abstract:
A semiconductor memory device with adjustable I/O bandwidth includes a plurality of data I/O buffers connected one by one to a plurality of I/O ports, a switch array including a plurality of switches for connecting the plurality of data I/O buffers to a plurality of sense amplifier arrays, and a switch control unit for receiving external control signals to control the data I/O buffer and the plurality of switches.
Public/Granted literature
- US20060072361A1 Semiconductor memory device with adjustable I/O bandwidth Public/Granted day:2006-04-06
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