Invention Grant
- Patent Title: Voltage stabilizer memory module
- Patent Title (中): 稳压器内存模块
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Application No.: US11442818Application Date: 2006-05-30
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Publication No.: US07663939B2Publication Date: 2010-02-16
- Inventor: Henry Nguyen , Ngoc Le
- Applicant: Henry Nguyen , Ngoc Le
- Applicant Address: US CA Fountain Valley
- Assignee: Kingston Technology Corporation
- Current Assignee: Kingston Technology Corporation
- Current Assignee Address: US CA Fountain Valley
- Agency: Sawyer Law Group, P.C.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A memory module is disclosed. The memory module comprises a voltage supply; a memory interface coupled to the voltage supply; a plurality of memory components; and a voltage stabilizer converter (VSC) coupled to the memory interface and to the plurality of memory components, the VSC for ensuring that the plurality of memory components operate at their optimum performance level. A voltage stabilizer memory module (VSMM) in accordance with the present invention includes a printed circuit board (PCB) that contains memory chips, discrete components, a voltage stabilizer converter, and other related components. The voltage stabilizer converter uses system voltage supply as its input and its output is the voltage supply for the DRAM components. Accordingly, the VSSM is more adaptable, more stable and has better performance than conventional memory modules.
Public/Granted literature
- US20070280010A1 Voltage stabilizer memory module Public/Granted day:2007-12-06
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