A semiconductor memory device is capable of reducing the current dissipation in a termination circuit and allowing a voltage level of a GIO line to rapidly reach a voltage level of a termination voltage when a termination operation is performed. The semiconductor memory device includes a global input/output line configured to transport data between a core region and an interface region, a main driving block configure to drive a voltage level of the global input/output line to predetermined termination voltage level in response to a termination enabling signal, and an auxiliary driving block configured to drive the is voltage level of the global input/output line to the predetermined termination voltage level in response to an over-driving signal, wherein the over-driving signal is enabled for a predetermined period of time during an initial period of an enabling interval for the termination enabling signal.