Invention Grant
- Patent Title: Capacitor supported precharging of memory digit lines
- Patent Title (中): 电容器支持对存储器数字线进行预充电
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Application No.: US12228459Application Date: 2008-08-12
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Publication No.: US07663952B2Publication Date: 2010-02-16
- Inventor: Shigeki Tomishima
- Applicant: Shigeki Tomishima
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Ropes & Gray LLP
- Agent Jeffrey H. Ingerman; Chia-Hao La
- Priority: JP2004-236245 20040813
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
Circuits and methods are provided for precharging pairs of memory digit lines. The final precharge voltage of the digit lines is different from the average of the digit line voltages prior to precharging. The final precharge voltage can be set by appropriately selecting the size of a capacitor in the precharge circuit.
Public/Granted literature
- US20090003038A1 Capacitor supported precharching of memory digit lines Public/Granted day:2009-01-01
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