Invention Grant
- Patent Title: Semiconductor laser device
- Patent Title (中): 半导体激光器件
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Application No.: US11763640Application Date: 2007-06-15
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Publication No.: US07664152B2Publication Date: 2010-02-16
- Inventor: Junichi Horie
- Applicant: Junichi Horie
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2004-112254 20040406; JP2004-372897 20041224
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film on the front surface electrode or the rear surface electrode and made of a material that does not react with Au, and a coating film that covers an end face on a light emitting side and an end face opposite the light emitting side. The anti-adhesive films may be located at least at the four corners of the front or rear surface electrode.
Public/Granted literature
- US20080198889A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2008-08-21
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