Invention Grant
- Patent Title: Semiconductor memory device and operating method of the same
- Patent Title (中): 半导体存储器件及其操作方法相同
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Application No.: US11133265Application Date: 2005-05-20
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Publication No.: US07664908B2Publication Date: 2010-02-16
- Inventor: Tatsuya Ishizaki
- Applicant: Tatsuya Ishizaki
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2004-156506 20040526
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C8/00 ; G06F13/00 ; G06F13/28

Abstract:
A semiconductor memory device adapted to burst transmission is provided for improving flexibility of data write operation. The semiconductor memory device is composed of a memory array, a set of write registers, and an input buffer designed to sequentially receive a series of write data during a burst cycle, and to write the write data into the associated write registers. The device also includes a write release register containing a set of write release flags associated with the write registers, respectively, and a write release register controller asserting the associated write release flags in response to the write data being written into the associated write registers. The device also contains a write amplifier designed to concurrently write the write data contained in the write registers associated with the asserted write release flags, selectively, when the burst cycle is aborted in response to a control signal.
Public/Granted literature
- US20050265088A1 Semiconductor memory device and operating method of the same Public/Granted day:2005-12-01
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