Invention Grant
- Patent Title: Semiconductor device verification system and semiconductor device fabrication method
- Patent Title (中): 半导体器件验证系统和半导体器件制造方法
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Application No.: US11640231Application Date: 2006-12-18
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Publication No.: US07665050B2Publication Date: 2010-02-16
- Inventor: Ryoji Koizumi
- Applicant: Ryoji Koizumi
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Fujitsu Patent Center
- Priority: JP2006-184722 20060704
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A semiconductor device verification system capable of verifying operation with great accuracy. A pattern matching verification system outputs interference pattern information. A physical verification system compiles the interference pattern information and a design rule and extracts a design rule applied to the interference pattern information. The physical verification system then refers to the design rule to verify a compared cell list and the interference pattern information. As a result, the physical verification system can perform physical verification of layout data without skipping data regarding the compared cell list.
Public/Granted literature
- US20080010623A1 Semiconductor device verification system and semiconductor device fabrication method Public/Granted day:2008-01-10
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