Invention Grant
US07666051B2 Device and method for achieving enhanced field emission utilizing nanostructures grown on a conductive substrate
失效
用于通过在导电基底上生长的纳米结构实现增强的场发射的装置和方法
- Patent Title: Device and method for achieving enhanced field emission utilizing nanostructures grown on a conductive substrate
- Patent Title (中): 用于通过在导电基底上生长的纳米结构实现增强的场发射的装置和方法
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Application No.: US11651267Application Date: 2007-01-09
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Publication No.: US07666051B2Publication Date: 2010-02-23
- Inventor: Zhifeng Ren , Sung Ho Jo , Debasish Banerjee
- Applicant: Zhifeng Ren , Sung Ho Jo , Debasish Banerjee
- Applicant Address: US MA Chestnut Hill
- Assignee: The Trustees of Boston College
- Current Assignee: The Trustees of Boston College
- Current Assignee Address: US MA Chestnut Hill
- Agency: Greenberg Traurig, LLP
- Agent David J. Dykeman
- Main IPC: H01J9/00
- IPC: H01J9/00 ; H01J1/62

Abstract:
A device and method is presented for achieving a high field emission from the application of a low electric field. More specifically, the device includes a substrate wherein a plurality of nanostructures are grown on the substrate. The relationship of the nanostructures and the substrate (the relationship includes the number of nanostructures on the substrate, the orientation of the nanostructures in relationship to each other and in relationship to the substrate, the geometry of the substrate, the morphology of the nanostructures and the morphology of the substrate, the manner in which nanostructures are grown on the substrate, the composition of nanostructure and composition of substrate, etc) allow for the generation of the high field emission from the application of the low electric field.
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