Invention Grant
- Patent Title: Rough polishing method of semiconductor wafer and polishing apparatus of semiconductor wafer
- Patent Title (中): 半导体晶片的粗抛光方法和半导体晶片的抛光装置
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Application No.: US12250356Application Date: 2008-10-13
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Publication No.: US07666063B2Publication Date: 2010-02-23
- Inventor: Kazuaki Kozasa , Tomonori Kawasaki , Kosuke Miyoshi
- Applicant: Kazuaki Kozasa , Tomonori Kawasaki , Kosuke Miyoshi
- Applicant Address: JP Hiratsuka-Shi
- Assignee: Sumco Techxiv Corporation
- Current Assignee: Sumco Techxiv Corporation
- Current Assignee Address: JP Hiratsuka-Shi
- Agency: Frishauf, Holtz, Goodman & Chick, P.C.
- Priority: JP2006-267286 20060929
- Main IPC: B24B49/00
- IPC: B24B49/00

Abstract:
A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer using a polishing apparatus includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit. The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table in the first polishing step.
Public/Granted literature
- US20090042482A1 ROUGH POLISHING METHOD OF SEMICONDUCTOR WAFER AND POLISHING APPARATUS OF SEMICONDUCTOR WAFER Public/Granted day:2009-02-12
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