Invention Grant
- Patent Title: Semiconductor etching process to release single crystal silicon mirrors
- Patent Title (中): 半导体蚀刻工艺释放单晶硅镜
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Application No.: US11264898Application Date: 2005-11-01
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Publication No.: US07666319B1Publication Date: 2010-02-23
- Inventor: Kegang Huang
- Applicant: Kegang Huang
- Applicant Address: US CA Santa Clara
- Assignee: Miradia Inc.
- Current Assignee: Miradia Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: C23F1/00
- IPC: C23F1/00

Abstract:
A spatial light modulator structure is fabricated by forming moveable reflecting elements through plasma etching of silicon in a chlorine ambient. In accordance with one particular embodiment, a mirror comprising single crystal silicon is released from the surrounding material by plasma etching in an ambient including chlorine (Cl2), sulfur hexafluoride (SF6), and boron trichloride (BCl3). Cl2 serves as a source of reactive chlorine etching species for the plasma. SF6 provides a source of fluorine, a reactive species enhancing the rate of etching single crystal silicon. BCl3 provides boron, which becomes incorporated on the surface of the etched single crystal silicon as a passivation layer controlling etch profile. Plasma etching of the single crystal silicon to release the mirrors takes place in the absence of oxygen, in order to avoid unwanted formation of silicon oxide residue that can adversely affect mechanical and optical properties of the resulting device.
Public/Granted literature
- US11486P New Guinea Impatiens plant named 'BFP-796' Public/Granted day:2000-08-22
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