Invention Grant
- Patent Title: Top-emitting nitride-based light emitting device and method of manufacturing the same
- Patent Title (中): 顶部发射氮化物基发光器件及其制造方法
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Application No.: US12180312Application Date: 2008-07-25
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Publication No.: US07666693B2Publication Date: 2010-02-23
- Inventor: June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
- Applicant: June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
- Applicant Address: KR KR
- Assignee: Samsung Electronics Co., Ltd.,Gwangju Institute of Science and Technology
- Current Assignee: Samsung Electronics Co., Ltd.,Gwangju Institute of Science and Technology
- Current Assignee Address: KR KR
- Agency: Cantor Colburn, LLP
- Priority: KR10-2003-0094698 20031222; KR10-2004-0088166 20041102
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.
Public/Granted literature
- US20080299687A1 TOP-EMITTING NITRIDE-BASED LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-12-04
Information query
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