Invention Grant
US07666698B2 Method for forming and sealing a cavity for an integrated MEMS device
失效
用于形成和密封用于集成MEMS器件的空腔的方法
- Patent Title: Method for forming and sealing a cavity for an integrated MEMS device
- Patent Title (中): 用于形成和密封用于集成MEMS器件的空腔的方法
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Application No.: US11386147Application Date: 2006-03-21
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Publication No.: US07666698B2Publication Date: 2010-02-23
- Inventor: Peter Zurcher
- Applicant: Peter Zurcher
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia, Fisher & Lorenz, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/31 ; H01L21/469
Abstract:
A method is provided for constructing a microelectronic assembly. A semiconductor substrate having a MEMS device formed on a first portion thereof, a semiconductor device formed on a second portion thereof, and a build up layer having a first portion formed over the MEMS device and a second portion formed over the semiconductor device is provided. The first portion of the build up layer over the MEMS device is removed. A release body is formed adjacent to the MEMS device. A structural material is formed over the release body. An opening is formed in the structural material to expose the release body. The release body is removed through the opening to form a cavity between the MEMS device and the structural material. The opening in the structural material is sealed with a sealing material.
Public/Granted literature
- US20070224832A1 Method for forming and sealing a cavity for an integrated MEMS device Public/Granted day:2007-09-27
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