Invention Grant
US07666703B2 Image sensor pixel having a lateral doping profile formed with indium doping
有权
具有由铟掺杂形成的横向掺杂分布的图像传感器像素
- Patent Title: Image sensor pixel having a lateral doping profile formed with indium doping
- Patent Title (中): 具有由铟掺杂形成的横向掺杂分布的图像传感器像素
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Application No.: US11036647Application Date: 2005-01-14
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Publication No.: US07666703B2Publication Date: 2010-02-23
- Inventor: Howard E. Rhodes , Hidetoshi Nozaki
- Applicant: Howard E. Rhodes , Hidetoshi Nozaki
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.
Public/Granted literature
- US20060158538A1 Image sensor pixel having a lateral doping profile formed with indium doping Public/Granted day:2006-07-20
Information query
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