Invention Grant
- Patent Title: Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature
- Patent Title (中): 在低温下在氧化铟锡玻璃基板上制造薄膜多晶硅太阳能电池的方法
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Application No.: US11987803Application Date: 2007-12-04
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Publication No.: US07666706B2Publication Date: 2010-02-23
- Inventor: Yu-Hsiang Huang , Shan-Ming Lan , Tsun-Neng Yang , Chien-Te Ku , Meng-Chu Chen , Zhen-Yu Li
- Applicant: Yu-Hsiang Huang , Shan-Ming Lan , Tsun-Neng Yang , Chien-Te Ku , Meng-Chu Chen , Zhen-Yu Li
- Applicant Address: TW Taoyuan
- Assignee: Atomic Energy Council
- Current Assignee: Atomic Energy Council
- Current Assignee Address: TW Taoyuan
- Agency: Jackson IPG PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film are annealed and therefore converted and interchanged into an aluminum-silicon alloy film and a p+ poly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a p− poly-crystalline silicon film is coated on the p+ poly-crystalline silicon film, and an n+ poly-crystalline silicon film is coated on the p− poly-crystalline silicon film. An ohmic contact is provided on the transparent and conductive ITO film. Other ohmic contacts are provided on the n+ poly-crystalline silicon film. An anti-reflection film is coated on the n+ poly-crystalline silicon film.
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