Invention Grant
US07666717B2 Non-volatile memory devices including fuse covered field regions
失效
非易失性存储器件包括保险丝覆盖的场区域
- Patent Title: Non-volatile memory devices including fuse covered field regions
- Patent Title (中): 非易失性存储器件包括保险丝覆盖的场区域
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Application No.: US11538839Application Date: 2006-10-05
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Publication No.: US07666717B2Publication Date: 2010-02-23
- Inventor: Jong-Sun Sel , Sung-Nam Chang , Dae-Woong Kang , Bong-Tae Park
- Applicant: Jong-Sun Sel , Sung-Nam Chang , Dae-Woong Kang , Bong-Tae Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR2003-96767 20031224
- Main IPC: H01L21/82
- IPC: H01L21/82
Abstract:
A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse. An isolation layer is configured to isolate the field regions. A fuse insulating layer is interposed between the at least one fuse and the field regions.
Public/Granted literature
- US20070087496A1 NON-VOLATILE MEMORY DEVICES INCLUDING FUSE COVERED FIELD REGIONS Public/Granted day:2007-04-19
Information query
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