Invention Grant
- Patent Title: Method and apparatus for improving integrated circuit device performance using hybrid crystal orientations
- Patent Title (中): 使用混合晶体取向提高集成电路器件性能的方法和装置
-
Application No.: US12100615Application Date: 2008-04-10
-
Publication No.: US07666720B2Publication Date: 2010-02-23
- Inventor: John J. Pekarik , Xudong Wang
- Applicant: John J. Pekarik , Xudong Wang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Michael LeStrange
- Main IPC: H01L21/8234
- IPC: H01L21/8234

Abstract:
A method of forming a current mirror device for an integrated circuit includes configuring a reference current source; forming a first field effect transistor (FET) in series with the reference current source, the first FET of a first conductivity type formed on a first portion of a substrate having a first crystal lattice orientation; and forming a second FET of the first conductivity type on a second portion of the substrate having a second crystal lattice orientation, with a gate terminal of the first FET coupled to a gate terminal of the second FET, and the gate terminals of the first and second FETs coupled to the reference current source; wherein the carrier mobility of the first FET formed on the first portion of the substrate is different than the carrier mobility of the second FET formed on the second portion of the substrate.
Public/Granted literature
Information query
IPC分类: