Invention Grant
US07666722B2 Manufacturing method of semiconductor device, and IC card, IC tag, RFID, transponder, bill, securities, passport, electronic apparatus, bag, and garment 有权
半导体器件制造方法,IC卡,IC标签,RFID,应答器,票据,证券,护照,电子仪器,袋子和服装

  • Patent Title: Manufacturing method of semiconductor device, and IC card, IC tag, RFID, transponder, bill, securities, passport, electronic apparatus, bag, and garment
  • Patent Title (中): 半导体器件制造方法,IC卡,IC标签,RFID,应答器,票据,证券,护照,电子仪器,袋子和服装
  • Application No.: US10588989
    Application Date: 2005-02-15
  • Publication No.: US07666722B2
    Publication Date: 2010-02-23
  • Inventor: Jun Koyama
  • Applicant: Jun Koyama
  • Applicant Address: JP Atsugi-shi, Kanagawa-ken
  • Assignee: Semiconductor Energy Laboratory Co., Ltd.
  • Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
  • Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
  • Agency: Robinson Intellectual Property Law Office, P.C.
  • Agent Eric J. Robinson
  • Priority: JP2004-045480 20040220
  • International Application: PCT/JP2005/002680 WO 20050215
  • International Announcement: WO2005/081307 WO 20050901
  • Main IPC: H01L21/00
  • IPC: H01L21/00
Manufacturing method of semiconductor device, and IC card, IC tag, RFID, transponder, bill, securities, passport, electronic apparatus, bag, and garment
Abstract:
The present invention provides a manufacturing method of a semiconductor device used as an ID chip, by which data can be written with improved throughput. According to the manufacturing method of a semiconductor device having a modulation circuit, a demodulation circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate, the memory circuit is a nonvolatile memory circuit of which data is written in the manufacture of the semiconductor device, and elements in a data portion are formed by electron beam exposure or laser exposure while the other portions are formed by mirror projection exposure, step and repeat exposure, or step and scan exposure.
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