Methods of wiring to a transistor and a related transistor are disclosed. In one embodiment, the method includes a method of forming wiring to a transistor, the method comprising: forming a transistor on a semiconductor-on-insulator (SOI) substrate using masks that are mirror images of an intended layout, the forming including forming a gate and a source/drain region for each and a channel, the SOI substrate including a semiconductor-on-insulator (SOI) layer, a buried insulator layer and a silicon substrate; forming a dielectric layer over the transistor; bonding the dielectric layer to another substrate; removing the silicon substrate from the SOI substrate to the buried insulator layer; forming a contact to each of the source/drain region and the gate from a channel side of the gate; and forming at least one wiring to the contacts on the channel side of the gate.