Invention Grant
US07666731B2 Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor and a conventional CMOS transistor
有权
制造横向双扩散MOSFET（LDMOS）晶体管和常规CMOS晶体管的方法
- Patent Title: Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor and a conventional CMOS transistor
- Patent Title (中): 制造横向双扩散MOSFET（LDMOS）晶体管和常规CMOS晶体管的方法
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Application No.: US11623043Application Date: 2007-01-12
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Publication No.: US07666731B2Publication Date: 2010-02-23
- Inventor: Budong You , Marco A. Zuniga
- Applicant: Budong You , Marco A. Zuniga
- Applicant Address: US CA Fremont
- Assignee: Volterra Semiconductor Corporation
- Current Assignee: Volterra Semiconductor Corporation
- Current Assignee Address: US CA Fremont
- Agency: Fish & Richardson P.C.
- Main IPC: H01L21/8238
- IPC: H01L21/8238
Abstract:
A method of fabricating an LDMOS transistor and a conventional CMOS transistor together on a substrate. A P-body is implanted into a source region of the LDMOS transistor. A gate oxide for the conventional CMOS transistor is formed after implanting the P-body into the source region of the LDMOS transistor. A fixed thermal cycle associated with forming the gate oxide of the conventional CMOS transistor is not substantially affected by the implanting of the P-body into the source region of the LDMOS transistor.
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