Invention Grant
- Patent Title: Nonvolatile semiconductor memory device to realize multi-bit cell and method for manufacturing the same
- Patent Title (中): 非易失性半导体存储器件实现多位单元及其制造方法
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Application No.: US11854676Application Date: 2007-09-13
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Publication No.: US07666740B2Publication Date: 2010-02-23
- Inventor: Dong-Oog Kim
- Applicant: Dong-Oog Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2006-0098760 20061011
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A nonvolatile semiconductor memory device that realizes a multi-bit cell and a method for manufacturing the same includes manufacturing the nonvolatile semiconductor memory device to be capable of storing multi-bit data, for example, 4-bit data, in a single memory cell and, as a result, the integration degree of a NOR type nonvolatile semiconductor memory device can be improved.
Public/Granted literature
- US20080087936A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE TO REALIZE MULTI-BIT CELL AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2008-04-17
Information query
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