Invention Grant
US07666740B2 Nonvolatile semiconductor memory device to realize multi-bit cell and method for manufacturing the same 失效
非易失性半导体存储器件实现多位单元及其制造方法

  • Patent Title: Nonvolatile semiconductor memory device to realize multi-bit cell and method for manufacturing the same
  • Patent Title (中): 非易失性半导体存储器件实现多位单元及其制造方法
  • Application No.: US11854676
    Application Date: 2007-09-13
  • Publication No.: US07666740B2
    Publication Date: 2010-02-23
  • Inventor: Dong-Oog Kim
  • Applicant: Dong-Oog Kim
  • Applicant Address: KR Seoul
  • Assignee: Dongbu HiTek Co., Ltd.
  • Current Assignee: Dongbu HiTek Co., Ltd.
  • Current Assignee Address: KR Seoul
  • Agency: Sherr & Vaughn, PLLC
  • Priority: KR10-2006-0098760 20061011
  • Main IPC: H01L21/336
  • IPC: H01L21/336
Nonvolatile semiconductor memory device to realize multi-bit cell and method for manufacturing the same
Abstract:
A nonvolatile semiconductor memory device that realizes a multi-bit cell and a method for manufacturing the same includes manufacturing the nonvolatile semiconductor memory device to be capable of storing multi-bit data, for example, 4-bit data, in a single memory cell and, as a result, the integration degree of a NOR type nonvolatile semiconductor memory device can be improved.
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