Invention Grant
- Patent Title: Method and system for forming an air gap structure
- Patent Title (中): 用于形成气隙结构的方法和系统
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Application No.: US11874461Application Date: 2007-10-18
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Publication No.: US07666754B2Publication Date: 2010-02-23
- Inventor: Dorel I. Toma , Junjun Liu
- Applicant: Dorel I. Toma , Junjun Liu
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/76
- IPC: H01L21/76

Abstract:
A method for forming an air gap structure on a substrate is described. The method comprises forming a sacrificial layer on a substrate, wherein the sacrificial layer comprises a decomposable material that thermally decomposes at a thermal decomposition temperature above approximately 350 degrees C. Thereafter, a cap layer is formed on the sacrificial layer at a substrate temperature less than the thermal decomposition temperature of the sacrificial layer. The sacrificial layer is decomposed by performing a first exposure of the substrate to ultraviolet (UV) radiation and heating the substrate to a first temperature less than the thermal decomposition temperature of the sacrificial layer, and the decomposed sacrificial layer is removed through the cap layer. The cap layer is cured to cross-link the cap layer by performing a second exposure of the substrate to UV radiation and heating the substrate to a second temperature greater than the first temperature.
Public/Granted literature
- US20090130863A1 Method and system for forming an air gap structure Public/Granted day:2009-05-21
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