Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11680814Application Date: 2007-03-01
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Publication No.: US07666761B2Publication Date: 2010-02-23
- Inventor: Kiyonori Oyu , Kensuke Okonogi , Hirotaka Kobayashi , Koji Hamada
- Applicant: Kiyonori Oyu , Kensuke Okonogi , Hirotaka Kobayashi , Koji Hamada
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Whitham Curtis Christofferson & Cook, PC
- Priority: JP2004-88308 20040325
- Main IPC: H01L21/322
- IPC: H01L21/322
Abstract:
In manufacturing a semiconductor device, the first gettering layer is formed on the backside of a wafer, and the second gettering layers are then formed on the backside and side surfaces of a chip, allowing these gettering layers to serve as trapping sites against metallic contamination that generated after backside grinding in assembly processes.
Public/Granted literature
- US20070158784A1 Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2007-07-12
Information query
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