Invention Grant
- Patent Title: CMOS structure including dual metal containing composite gates
- Patent Title (中): CMOS结构包括双金属复合栅极
-
Application No.: US11625984Application Date: 2007-01-23
-
Publication No.: US07666774B2Publication Date: 2010-02-23
- Inventor: Huilong Zhu , Dae-Gyu Park , Zhijiong Luo , Ying Zhang
- Applicant: Huilong Zhu , Dae-Gyu Park , Zhijiong Luo , Ying Zhang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/8238
- IPC: H01L21/8238
Abstract:
A CMOS structure and a method for fabricating the CMOS structure include a first transistor located within a first semiconductor substrate region having a first polarity. The first transistor includes a first gate electrode that includes a first metal containing material layer and a first silicon containing material layer located upon the first metal containing material layer. The CMOS structure also includes a second transistor located within a laterally separated second semiconductor substrate region having a second polarity that is different than the first polarity. The second transistor includes a second gate electrode comprising a second metal containing material layer of a composition that is different than the first metal containing material layer, and a second silicon containing material layer located upon the second metal containing material layer. The first silicon containing material layer and the first semiconductor substrate region comprise different materials. The second silicon containing material layer and the second semiconductor substrate region also comprise different materials.
Public/Granted literature
- US20080173946A1 CMOS STRUCTURE INCLUDING DUAL METAL CONTAINING COMPOSITE GATES Public/Granted day:2008-07-24
Information query
IPC分类:
