Invention Grant
- Patent Title: Methods of forming conductive structures
- Patent Title (中): 形成导电结构的方法
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Application No.: US11218232Application Date: 2005-09-01
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Publication No.: US07666776B2Publication Date: 2010-02-23
- Inventor: Dale W. Collins , Rita J. Klein , James E. Green
- Applicant: Dale W. Collins , Rita J. Klein , James E. Green
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
The invention includes methods of forming pluralities of electrically conductive structures. The methods can include formation of a gradient-containing material across a substrate and in direct physical contact with conductive surfaces of nodes. The gradient-containing material can consist essentially of tantalum nitride at a lowermost portion in contact with the conductive surfaces, consist essentially of tantalum at an uppermost portion, and have a TaN/Ta gradient extending between the lowermost and uppermost portions. Alternatively, the gradient-containing material can have a Co/W gradient extending therethrough. Conductive structures can be formed over the gradient-containing material. The invention also includes constructions comprising electrically conductive lines over a material having a TaN/Ta gradient, or a W/Co gradient, extending therethrough.
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