A method for fabricating a silicide gate field effect transistor includes masking a silicon source/drain region prior to forming the silicide gate by annealing a metal silicide forming metal layer contacting a silicon-containing gate. The silicide gate may be either a fully silicided gate or a partially silicided gate. After unmasking the source/drain region a silicide layer may be formed upon the source/drain region, and also upon the partially silicided gate. The second silicide layer and the partially silicided gate also provide a fully silicided gate.