Systems and methods for nanowire growth and harvesting

Invention Grant

US07666791B2 Systems and methods for nanowire growth and harvesting 有权

Title translation: 纳米线生长和收获的系统和方法

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Patent Title: Systems and methods for nanowire growth and harvesting
Patent Title (中): 纳米线生长和收获的系统和方法
Application No.: US11839335

Application Date: 2007-08-15
Publication No.: US07666791B2

Publication Date: 2010-02-23
Inventor: Shahriar Mostarshed , Linda T. Romano
Applicant: Shahriar Mostarshed , Linda T. Romano
Applicant Address: US CA Palo Alto
Assignee: Nanosys, Inc.
Current Assignee: Nanosys, Inc.
Current Assignee Address: US CA Palo Alto
Agent Andrew L. Filler
Main IPC: H01L21/311
IPC: H01L21/311

Abstract:

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrificial growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

Abstract(Chinese):

本发明涉及用于纳米线生长和收获的系统和方法。在一个实施方案中，提供了纳米线生长和掺杂的方法，包括使用硅前体的组合的用于外延取向的纳米线生长的方法。在本发明的另一方面，提供了通过使用牺牲生长层来改善纳米线质量的方法。在本发明的另一方面，提供了将纳米线从一个衬底转移到另一个衬底的方法。

Public/Granted literature

US20080072818A1 Systems and Methods for Nanowire Growth and Harvesting Public/Granted day:2008-03-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀