Invention Grant
US07666801B2 Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands
失效
使用含有氨基硅烷配体的金属化合物形成金属氧化物的系统和方法
- Patent Title: Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands
- Patent Title (中): 使用含有氨基硅烷配体的金属化合物形成金属氧化物的系统和方法
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Application No.: US12248544Application Date: 2008-10-09
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Publication No.: US07666801B2Publication Date: 2010-02-23
- Inventor: Brian A. Vaartstra , Timothy A. Quick
- Applicant: Brian A. Vaartstra , Timothy A. Quick
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Mueting, Raasch & Gebhardt, P.A.
- Main IPC: H01L21/469
- IPC: H01L21/469
Abstract:
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.
Public/Granted literature
- US20090042406A1 SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL COMPOUNDS CONTAINING AMINOSILANE LIGANDS Public/Granted day:2009-02-12
Information query
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