Invention Grant
- Patent Title: Tantalum and niobium compounds
- Patent Title (中): 钽和铌化合物
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Application No.: US12249463Application Date: 2008-10-10
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Publication No.: US07667038B2Publication Date: 2010-02-23
- Inventor: Knud Reuter , Daniel Gaess , Jörg Sundermeyer
- Applicant: Knud Reuter , Daniel Gaess , Jörg Sundermeyer
- Applicant Address: DE Goslar
- Assignee: H. C. Starck GmbH
- Current Assignee: H. C. Starck GmbH
- Current Assignee Address: DE Goslar
- Agency: Connolly Bove Lodge & Hutz LLP
- Priority: DE102007049015 20071011
- Main IPC: C07F9/00
- IPC: C07F9/00 ; C07D333/02
Abstract:
The present invention relates to specific, novel tantalum and niobium compounds which can serve as starting materials for the preparation of chemical vapour deposition (CVD) precursors.
Public/Granted literature
- US20090099361A1 NOVEL TANTALUM AND NIOBIUM COMPOUNDS Public/Granted day:2009-04-16
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