Invention Grant
- Patent Title: Reduced current phase-change memory device
- Patent Title (中): 减少电流相变存储器件
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Application No.: US11440236Application Date: 2006-05-24
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Publication No.: US07667219B2Publication Date: 2010-02-23
- Inventor: Heon Yong Chang , Suk Kyoung Hong , Hae Chan Park
- Applicant: Heon Yong Chang , Suk Kyoung Hong , Hae Chan Park
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2005-0092025 20050930
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/04 ; H01L29/06
Abstract:
A phase-change memory device more precisely controls electrical current required to accomplish a phase change by using contact holes that extend between phase change layers that are sized differently from each other.
Public/Granted literature
- US20070075304A1 Reduced current phase-change memory device Public/Granted day:2007-04-05
Information query
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