Invention Grant
- Patent Title: Automatic on-die defect isolation
- Patent Title (中): 自动模内缺陷隔离
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Application No.: US11336161Application Date: 2006-01-20
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Publication No.: US07667231B2Publication Date: 2010-02-23
- Inventor: John D. Hyde , Jay A. Kuhn , Ronald L. Koepp , Ronald E. Paulsen
- Applicant: John D. Hyde , Jay A. Kuhn , Ronald L. Koepp , Ronald E. Paulsen
- Applicant Address: US WA Seattle
- Assignee: Impinj, Inc.
- Current Assignee: Impinj, Inc.
- Current Assignee Address: US WA Seattle
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L23/58
- IPC: H01L23/58

Abstract:
Microcircuits may include polysilicon features that are vulnerable to defects due to undesirable phenomena during manufacturing processes such as, inter alia, over-etching. The same phenomena that may cause defects can be exploited to automatically isolate the affected circuit and thus limit the harm caused by defects or incipient defects.
Public/Granted literature
- US20070172966A1 Automatic on-die defect isolation Public/Granted day:2007-07-26
Information query
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