Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11977333Application Date: 2007-10-24
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Publication No.: US07667249B2Publication Date: 2010-02-23
- Inventor: Susumu Inoue , Yo Takeda , Yutaka Maruo
- Applicant: Susumu Inoue , Yo Takeda , Yutaka Maruo
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2004-369588 20041221
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113 ; H01L29/06 ; H01L31/072 ; H01L31/0328

Abstract:
A semiconductor device includes: a semiconductor element provided on a semiconductor layer; a light-blocking wall provided around the semiconductor element; and a wiring layer electrically coupled to the semiconductor element and extended from an aperture not having the light-blocking wall to an outside of the light-blocking wall; wherein the wiring layer has a pattern containing a first section positioned in the aperture and a second section which has a width not narrower than a width of the aperture by providing a branched portion intersecting with an extension direction of the wiring layer; and wherein a surface of the branched portion facing outside of the light-blocking wall includes thereon a convex part.
Public/Granted literature
- US20080067564A1 Semiconductor device Public/Granted day:2008-03-20
Information query
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