Invention Grant
US07667250B2 Vertical gate device for an image sensor and method of forming the same
有权
用于图像传感器的垂直门装置及其形成方法
- Patent Title: Vertical gate device for an image sensor and method of forming the same
- Patent Title (中): 用于图像传感器的垂直门装置及其形成方法
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Application No.: US10892368Application Date: 2004-07-16
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Publication No.: US07667250B2Publication Date: 2010-02-23
- Inventor: Chandra Mouli
- Applicant: Chandra Mouli
- Applicant Address: KY Grand Cayman
- Assignee: Aptina Imaging Corporation
- Current Assignee: Aptina Imaging Corporation
- Current Assignee Address: KY Grand Cayman
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
A CMOS pixel cell having a charge transfer transistor adjacent the photo-conversion device. The transistor has a channel region surrounded by a gate and an upper source/drain region over the channel region.
Public/Granted literature
- US20060011919A1 Vertical gate device for an image sensor and method of forming the same Public/Granted day:2006-01-19
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