Invention Grant
- Patent Title: Semiconductor device including a laser light blocking layer which overlaps fuses
- Patent Title (中): 半导体器件包括与保险丝重叠的激光阻挡层
-
Application No.: US11237772Application Date: 2005-09-29
-
Publication No.: US07667290B2Publication Date: 2010-02-23
- Inventor: Yasuhiro Ido , Takeshi Iwamoto
- Applicant: Yasuhiro Ido , Takeshi Iwamoto
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-285816 20040930
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
The present invention provides a semiconductor device comprising: a substrate; a first insulating film formed on a principal surface of the substrate; a second insulating film formed on the first insulating film; a plurality of fuses formed on the second insulating film; and a blocking layer disposed in the first and second insulating films, the blocking layer being formed of a material capable of reflecting laser light irradiated to blow the plurality of fuses. The blocking layer overlaps a region in which the plurality of fuses are formed when viewed from the principal surface of the substrate. The plurality of fuses may be each formed in two or more insulating film layers laminated to one another on the second insulating film.
Public/Granted literature
- US20060076642A1 Semiconductor device and manufacturing method thereof Public/Granted day:2006-04-13
Information query
IPC分类:
