Invention Grant
- Patent Title: FPGA structure provided with multi parallel structure and method for forming the same
- Patent Title (中): FPGA结构提供多平行结构和形成方法
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Application No.: US11645656Application Date: 2006-12-27
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Publication No.: US07667291B2Publication Date: 2010-02-23
- Inventor: Kee Yong Kim
- Applicant: Kee Yong Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: KR10-2005-0132425 20051228
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
In an FPGA of a semiconductor device and a method of forming the FPGA, a first pattern having a voltage selectable conductivity is formed to connect first vias of the semiconductor device in parallel.
Public/Granted literature
- US20070145524A1 FPGA structure provided with multi parallel structure and method for forming the same Public/Granted day:2007-06-28
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